naina s emiconductor l td . 6 0 mds 1 d - 95 , sector 63, noida C ? 4205450 ? fax: 0120 ? three C phase bridge rectifier features easy connections excellent power volume ratio insulated type mds voltage ratings (t j = 25 0 c unless otherwise noted) type number voltage code vrrm, max. repetitive peak reverse voltage (v) vrsm, max. non - repetitive peak reverse voltage (v) irrm max @ tj max (ma) 60 mds 80 800 900 10 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 thermal and mechanical specifications (ta = 250c unless otherwise noted) parameters symbol values units maximum operating junction temperature range t j - 40 to + 150 0 c maximum storage temperature range t stg - 40 to + 150 0 c maximum thermal resistance, junction to case dc operation per module r th(jc) 0.37 0 c/w dc operation per junction 2.22 120 rect conduction angle per module 0.40 120 rect conduction angle per junction 2.42 maximum thermal resistance, case to heatsink per module, mounting surface smooth, flat and greased r th(cs) 0.03 0 c/w mounting torque 10% to heatsink t 4 to 6 nm to terminal 3 to 4 approximate weight 176 g
naina s emiconductor l td . 6 0 mds 2 d - 95 , sector 63, noida C ? 4205450 ? fax: 0120 ? electrical specifications (t j = 25 0 c unless otherwise noted) parameters conditions symbol values units maximum dc output current 120 0 rect conduction angle , t c = 85 0 c i 0 60 a maximum peak one - cycle forward, non - repetitive surge current t = 10ms no voltage reapplied t j = t j max. i fsm 420 a t = 8.3ms 440 t = 8.3ms 100% v rrm reapplied 350 t = 10ms 370 maximum i 2 t for fusing t = 8.3ms no voltage reapplied i 2 t 870 a 2 s t = 10ms 790 t = 8.3ms 100% v rrm reapplied 610 t = 10ms 560 maximum j 2 t for fusing t = 0.1 to 10ms, no voltage reapplied j 2 t 8700 a 2 s low level value of threshold voltage [ 16.7% * * i f(av) < i < * i f(av) ], @ t j max v f(to)1 0.85 v high level value of threshold voltage [ i > > i f(av) ], @ t j max v f(to)2 1.07 v low level value of forward slope resistance [ 16.7% * * i f(av) < i < * i f(av) ], @ t j max r 1 8.04 m? high level value of forward slope resistance [ i > * i f(av) ], @ t j max r 2 7.08 m? maximum forward voltage drop i pk = 100a, t p = 400 s single junction v fm 1.75 v rms isolation voltage f = 50hz, t = 1ms, all terminals shorted v iso 4000 v diode configuration
naina s emiconductor l td . 6 0 mds 3 d - 95 , sector 63, noida C ? 4205450 ? fax: 0120 ? all dimensions in mm
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